Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltage

ABSTRACT

A memory device of the non-volatile type including a memory array having a plurality of memory cells organized as sectors, each sector having a main word line associated with a plurality of local word lines, each local word line coupled to the main word line by a respective local word line driver circuit, each of the local word line driver circuits consisting of a first MOS transistor coupled between the respective main word line and a respective local word line and a second MOS transistor coupled between the respective local word line and a first biasing terminal.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/583,352, filed Sep. 26, 2019, which is a continuation of U.S. patentapplication Ser. No. 14/933,264, filed on Nov. 5, 2015, now issued asU.S. Pat. No. 10,468,109 on Nov. 5, 2019, which is a continuation ofU.S. patent application Ser. No. 13/895,591 filed May 16, 2013, nowissued as U.S. Pat. No. 9,214,233 on Dec. 15, 2015, which is acontinuation of U.S. patent application Ser. No. 13/477,431, filed May22, 2012, now issued as U.S. Pat. No. 8,456,922, which is a continuationof U.S. patent application Ser. No. 14/610,573, filed Dec. 14, 2006, nowissued as U.S. Pat. No. 8,189,396 on May 29, 2012, which are herebyincorporated by reference.

FIELD OF THE INVENTION

The present invention relates to semiconductor memory designs, and moreparticularly to improved word line driver designs for flash memory.

BACKGROUND OF THE INVENTION

The memory matrix architecture most widely utilized in the constructionof semiconductor integrated, non-volatile memory devices is the NORtype. In this type of architecture, memory cells belonging to one rowhave their gate terminals in common, while memory cells belonging to onecolumn have their drain terminals in common. The source terminals are,on the other hand, shared by all the cells of one sector. A portion of aNOR matrix, reprinted from U.S. Pat. No. 6,515,911, the entirety ofwhich in incorporated by reference herein, is shown in FIG. 1 .

Each memory location is identified by a given row and given column andfound at the intersection thereof. Each memory cell comprises afloating-gate transistor which has drain and source conductionterminals. As known in the art, the source, drain and gate terminals arebiased accordingly to perform read, program and erase operations.

A prerequisite of non-volatile memories of the flash EEPROM type is thatthe information stored therein should be erased by groups or packages ofbits. The erase operation is the only operation that involves biasing ofthe source terminal, and since all the cells have this terminal incommon, they can be written into and read from in an independent mannerbut must be erased simultaneously.

Particularly with flash memories, the erase operation is performed bysectors, in the sense that all the cells that run to the same sourceline must be erased simultaneously. Within a non-volatile memory matrix,the sectors can be organized either into rows or columns. In a row typeof organization, the size of a sector is given by the number of rowsthat it contains. The architecture of the storage device is designed tofit the number and size of the sectors in order to optimize the circuitarea consumption, as well as the device performance and reliability.

A single bit line is not shared by all of the sectors because of aproblem known as “drain stress.” Therefore, each sector is arranged toinclude a specific group of columns referred to as the “local bitlines.” Local bit lines are individually connected, via a passtransistor, to a main metallization connection referred to as the “mainbit line.” Each sector is assigned a local group of pass transistorswhich are only turned “on” in the addressed sector, so that the cells ofthe other sectors need not be affected by drain stress.

Shown schematically in FIG. 2 , also reprinted from the '911 patent, isa conventional architecture for a non-volatile memory matrix wherein thesectors are organized into rows. The rows of the memory matrix arephysically in the form of polysilicon strips interconnecting all thegate terminals of the cells in one row. The architecture includes aplurality of sectors each having an associated row decoder. A globalcolumn decoder is also provided. This architecture consumes a lot ofcircuit space because it entails the provision of a row decoder for eachsector, and of local column decoders to avoid the drain stressphenomenon.

Another prior art architecture shown in FIG. 3 , also reprinted from the'911 patent, organizes the non-volatile memory matrix into columns. Inthis case, the rows are shared in common by all sectors, and the sectorsize is determined by the number of columns. This architecture keeps theparasitic capacitance of each bit line relatively low, which isbeneficial to the circuit portion involved in reading the memorycontents. In addition, row decoding is shared by several sectors, whichaffords savings in circuit space. While being advantageous in severalways, this architecture has a drawback in that each time when a cell isaddressed, all the other cells in the same row also are biased andaffected by the so-called “gate stress.”

In view of the shortcomings of these prior art architectures, the '911patent proposes embodiments of hierarchical row decode. In one describedembodiment, a circuit device is provided capable of carrying out ahierarchical form of row decoding for semiconductor memory devices ofthe non-volatile type having a matrix of memory cells with sectorsorganized into columns. Each sector has a specific group of local wordlines individually connected to a main word line running through all ofthe sectors which have rows in common. The '911 patent describes a threetransistor structure for carrying out the hierarchical row decoding.

The word line driver design for the row decoders of these NORarchitectures has become increasingly more important since the peripherytransistors of the driver design cannot shrink proportionately withreductions in the size of the cell dimensions, as the driver transistorsmust be able to sustain the bias conditions of legacy generations.Therefore, as cell sizes reduce, the word line driver occupies a greateramount of the overall circuit layout area. While there are advantages tohierarchical row decoding schemes such as those proposed in the '911patent, these schemes consume valuable space. Therefore, improved wordline driver designs are desired.

SUMMARY OF THE INVENTION

A non-volatile memory device is provided. The device includes a memoryarray having a plurality of memory cells organized as sectors, eachsector having a main word line associated with a plurality of local wordlines, each local word line coupled to the main word line by arespective local word line driver circuit, each of the local word linedriver circuits consisting of a first MOS transistor coupled between therespective main word line and a respective local word line and a secondMOS transistor coupled between the respective local word line and afirst biasing terminal.

The above and other features of the present invention will be betterunderstood from the following detailed description of the preferredembodiments of the invention that is provided in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate preferred embodiments of theinvention, as well as other information pertinent to the disclosure, inwhich:

FIG. 1 is a schematic view of a portion of a conventional memory matrixof the NOR type;

FIG. 2 is a schematic view of a conventional architecture for anon-volatile memory matrix having sectors arranged in row form;

FIG. 3 is a schematic view of a conventional architecture for anon-volatile memory matrix having sectors arranged in column form;

FIG. 4 is a circuit diagram of a first embodiment of an exemplarytwo-transistor word line driver design;

FIG. 5 is a circuit diagram of a second embodiment of an exemplarytwo-transistor word line driver design;

FIG. 6 is a schematic diagram of a parallel flash, non-volatilesemiconductor memory device;

FIG. 7 is a schematic diagram of a serial flash, non volatilesemiconductor memory array;

FIG. 8 is a schematic illustration comparing parallel flash cell arraysand serial flash cell arrays; and

FIG. 9 illustrates various bias conditions in the two-transistor wordline driver design of FIG. 4 and memory cells coupled thereto in aserial flash during erasing.

DETAILED DESCRIPTION

As those in the art will recognize, word line driver circuits are usedto boost selected word lines to a desired voltage. Word line drivercircuits also provide final decoding of the row or X address of theselected core cell. Typically, each word line has an accompanying wordline driver circuit. With improvements in device layout and in processtechnologies, the core cells in a memory array are laid out atincreasingly finer pitches. As word lines are placed closer together,limitations are placed on the size of the word line driver circuits. Theword line driver designs described herein provide for reduced word linedriver size by limiting the number of operational components within theword line drivers. The exemplary biasing conditions proposed hereinillustrate the operability of the designs.

FIG. 8 is a schematic diagram comparing organizations of flash memoriesinto parallel flash cell arrays and serial flash cell arrays. Inparallel flash cell arrays, sectors do not share a common P-well.Sectors are typically broken into 64 KB sections. Erasing is executed bysector. With serial flash cell arrays, the array is structured in blocksof sectors. Each block has 16 sectors, with each sector having 4 KB ofmemory. Therefore, each block is 64 KB of memory. The sectors of eachblock share a common P-well but separate blocks do not.

FIG. 6 shows the incorporation of the word line driver of the presentinvention into a parallel flash memory device. Though only two sectors(0,1) are illustrated, it should be understood that a typical parallelflash will include 16 sectors (8 Mb), 32 sectors (16 Mb), 64 sectors (32Mb), 128 sectors (64 Mb) or 256 sectors (128 Mb). Each sector contains64 KB of memory biased through 16 main word lines MWLn[0:15]. Each mainword line is, in turn, coupled to 16 local word lines LWLn through arespective set of 16 corresponding local word line drivers wldrv[0:15],the details of which are described in detail below. In all, each sectorhas 256 local word lines LWLn[0:255].

FIG. 7 shows the incorporation of the word line driver of the presentinvention into a serial flash array, such as a SPI serial flash. Thoughonly two blocks (0,1) are illustrated, the device typically includes 16blocks of memory. Each block has 64 KB of storage accessed through 16corresponding main word lines MWLn[0:15] associated with respectivesectors of the block. Each sector has 4 KB of memory. Each main wordline is, in turn, coupled to 16 local word lines LWLn through arespective set of 16 corresponding local word line drivers wldrv[0:15],the details of which are described below. In all, each block has 256local word lines LWLn[0:255].

FIGS. 4-5 are schematic circuit diagrams of embodiments oftwo-transistor word line driver designs implemented in a non-volatile,flash NOR memory matrix having sectors arranged in column or other form.More specifically, the two-transistor word line driver is especiallyadapted for use in connection with a memory matrix structure where eachsector has a main word line with a plurality of local word lines withinthe sector each coupled to the main word line through a respective wordline driver 10 (FIG. 4 ) or 10A (FIG. 5 ). The description of the localword line drivers 10, 10A provided herein applies to but is not limitedto SPI serial flash and to parallel flash.

For NMOS cell designs, the P-well bias is raised to perform erasing. Theword line in the selected sector is biased to a negative voltage. Withserial flash, when performing sector erase (as opposed to block erase),the de-selected sectors in a selected block suffer erase disturbancefrom the common P-well bias shared with the cells of the selectedsector. The word line driver design is important for reducing this erasedisturbance.

Turning to FIG. 4 , a first embodiment of a two-transistor word linedriver design 10 is shown. As will be readily familiar to those in theart, in embodiments each local word line includes 2048 NOR cells. Inthis design 10, the word line driver for each local word line comprises,and preferably consists of, two MOS transistors, M1 and M2. A pluralityof local word lines share a respective main word line, which is biasedby a signal MWLn[m]. Transistor M1 is a PMOS transistor with its sourceterminal coupled to MWLn[m]. The drain terminal of PMOS transistor M1 iscoupled to the drain terminal of NMOS transistor M2. The drain terminalsare coupled to provide a read, program or erase bias LWLn[m] to arespective local word line. The source of NMOS transistor M2 is coupledto bias signal VNEG[n]. The bulk of the NMOS transistor M2 issource-coupled, as is the bulk of PMOS transistor M1.

The gate of transistor M1 receives control signal GMn[m]. The gate oftransistor M2 receives control signal GNn[M].

In embodiments, during programming, the de-selected local word line isbiased at 0V. More preferably, the de-selected word line can be biasedwith a negative voltage, such as −0.5 V or −1V, to reduce possibleleakage current of de-selected cells with the shared bit line, i.e.,LWL0[1:255] if LWL0[0] is selected for programming.

Exemplary operating conditions for this word line driver 10 when usedwith parallel flash for sector-by-sector erase, where the sectors do notshare a common P-well (See FIG. 6 ), are shown in the table below. Thetable shows the bias conditions when (a) local word line LWL0[0] isread, (b) the local word line LWL0[0] is programmed, and (c) sector 0 iserased.

Sector Soft Soft Read Program-1 Program-2 Erase Program-1 Program-2MWL0[0] 5 V 8 V 8 V 0 V VCC VCC MWL0[1:15] 0 V 0 V −0.5 V 0 V VCC VCCMWLn[0:15] VCC VCC VCC VCC VCC VCC GM0[0] −2 V −2 V 8 V → 0 V 0 V VCCVCC GN0[0] 0 V 0 V 8 V → 0 V 0 V VCC VCC GM0[1:15] 5 V 8 V 8 V 0 V VCCVCC GN0[1:15] 5 V 8 V 8 V 0 V VCC VCC GMn[0:15] VCC VCC VCC VCC VCC VCCGNn[0:15] VCC VCC VCC VCC VCC VCC VNEG[0] 0 V 0 V −0.5 V −7.5 V −0.5 V 0V VNG[n] 0 V 0 V 0 V 0 V 0 V 0 V LWL0[0] 5 V 8 V 8 V −7.5 V −0.5 V 0 VLWL0[1:15] 0 V 0 V −0.5 V −7.5 V −0.5 V 0 V LWL0[16:255] 0 V 0 V −0.5 V−7.5 V −0.5 V 0 V LWLn[0:255] 0 V 0 V 0 V 0 V 0 V 0 V

The following table shows operating conditions for both parallel flash(FIG. 6 ) and serial flash (FIG. 7 ). Specifically, the “block erase”conditions can be used to block erasing in serial flash or sectorerasing in parallel flash. The “sector erase” conditions of thefollowing table can be used for sector erasing in serial flash.

Block Sector Soft Soft Read Prog. 1 Prog. 2 Erase Erase Prog. 1 Prog. 2MWL0[0] 5 V 8 V 8 V −7.5 V −7.5 V VCC VCC MWL0[1:15] 0 V 0 V −0.5 V −7.5V 2.5 V VCC VCC MWLn[0:15] VCC VCC VCC VCC VCC VCC VCC GM0[0] −2 V −2 V8 V → 0 V −10 V −10 V VCC VCC GN0[0] 0 V 0 V 8 V → 0 V −10 V −10 V VCCVCC GM0[1:15] 5 V 8 V 8 V −10 V −10 V VCC VCC GN0[1:15] 5 V 8 V 8 V −10V −10 V VCC VCC GMn[0:15] VCC VCC VCC VCC VCC VCC VCC GNn[0:15] VCC VCCVCC VCC VCC VCC VCC VNEG[0] 0 V 0 V −0.5 V −7.5 V −7.5 V −0.5 V 0 VVNEG[n] 0 V 0 V 0 V 0 V 0 V 0 V 0 V LWL0[0] 5 V 8 V 8 V −7.5 V −7.5 V−0.5 V 0 V LWL0[1:15] 0 V 0 V −0.5 V −7.5 V −7.5 V −0.5 V 0 VLWL0[16:255] 0 V 0 V −0.5 V −7.5 V 2.5 V −0.5 V 0 V LWLn[0:255] 0 V 0 V0 V 0 V 0 V 0 V 0 V

The two foregoing tables show two alternative programming conditions,designated Program-1 and Program-2. Soft program conditions are alsoshown. During programming of local word line LWL0[0], the de-selectedword lines (LWL0[1:255] and LWLn[0:255]) are biased at ground (0V)(Program-1 condition). In Program 2 conditions, local word lineLWL0[1:255] of the selected sector 0 are biased at a negative voltage,such as −0.5V or −1.0V, to reduce the possible cell leakage current onthe de-selected cell with the shared bit line. For GM0[0] and GN0[0],“8V.fwdarw.0V” means 8V is applied initially to pass −0.5V to all wordlines controlled by GM0[0] and GN0[0]. Then, 0V is applied to pass 8V tothe selected word line. These conditions assume the NMOS thresholdvoltage Vth>0.5V.

In the table above, the block erase of the serial flash is the same asthe sector erase of the serial flash except for the biasing of the mainword lines MWL0[1:15] associated with local word lines LWL0[16:255].During sector erasing of the serial flash, the de-selected sector canhave a positive voltage on its word lines, such as 2.5 V, to reduceerase disturbance. The P-well of the NOR cells will be biased between 6Vand 8V generally. The positive word line bias reduces the voltage dropfrom the P-well to the de-selected word lines, thereby reducing erasedisturbance.

Those in the art will understand that soft programming is used aftererasing to correct the over-erased cells, i.e., cells where thethreshold voltage is too low, for example, below 1V, to have a higherthreshold. During soft program, the word line voltage is set to 0V or anegative voltage such as −0.5V or −1.0 V rather than 8.0 V. Softprogramming is also known in the art as over-erase correction.

NMOS transistor M2 preferably is a triple well NMOS transistor, since anegative voltage is applied as signal VNEG during erase and when usingthe biasing conditions of Program-2 and Soft Program-1. The NMOS bulkmust be biased at the most negative voltage. If a normal NMOS is used,the bulk is at VSS and is p-type. When a negative voltage is input tothe word line, the p-n junction on the bulk to n+ source/drain would beturned on. Turn-on is avoided using a triple well NMOS.

FIG. 5 is circuit diagram of an alternative embodiment of a word linedriver 10A for biasing local word lines in the parallel or serial flasharrays of FIGS. 6 and 7 . The word line driver for each local word line(LWLn[m]) comprises, and preferably consists of, two NMOS transistors M3and M4 coupled between the respective main word line (MWLn[m]) and aterminal designated VNEG[n].

Exemplary bias conditions for the embodiment of FIG. 5 are shown in thetable below for both serial and parallel flash memory arrays using thisdual NMOS word line driver 10A embodiment. Specifically, the “blockerase” conditions can be used to block erasing in serial flash or sectorerasing in parallel flash. The “sector” erase conditions of thefollowing table can be used for sector erasing in serial flash. Thisembodiment sets the de-selected local word lines (LWL0[1:255] andLWLn[0:255]) to either 0V or a negative voltage (e.g., −0.5 V or −1.0V)during programming operation.

Block Sector Soft Soft Read Prog. 1 Prog. 2 Erase Erase Prog.-1 Prog.-2MWL0[0] 5 V 8 V 8 V −7.5 V −7.5 V −0.5 V 0 V MWL0[1:15] 0 V 0 V −0.5 V−7.5 V 2.5 V −0.5 V 0 V MWLn[0:15] VCC VCC VCC VCC VCC VCC VCC GM0[0] 8V 10.5 V 10.5 V 5 V 5 V 0 V 0 V GN0[0] 0 V 0 V −0.5 V −7.5 V −7.5 V 8 V8 V GM0[1:15] 0 V 0 V 0 V 5 V 5 V 0 V 0 V GN0[1:15] 5 V 8 V 8 V −7.5 V−7.5 V 8 V 8 V GMn[0:15] VCC VCC VCC VCC VCC VCC VCC GNn[0:15] VCC VCCVCC VCC VCC VCC VCC VNEG[0] 0 V 0 V −0.5 V −7.5 V −7.5 V −0.5 V 0 VVNEG[n] 0 V 0 V 0 V 0 V 0 V 0 V 0 V LWL0[0] 5 V 8 V 8 V −7.5 V −7.5 V−0.5 V 0 V LWL0[1:15] 0 V 0 V −0.5 V −7.5 V −7.5 V −0.5 V 0 VLWL0[16:255] 0 V 0 V −0.5 V −7.5 V 2.5 V −0.5 V 0 V LWLn[0:255] 0 V 0 V0 V 0 V 0 V 0 V 0 V

As shown in FIG. 9 , performing sector-by-sector erasing (as opposed toblock-by-block erasing) in serial flash results in a 10V junction biasas well as a 5V P-well disturb for the deselected sector if the flashcells need 15V to perform erasure. The voltage of the local word line ofthe deselected sector is a tradeoff between junction bias and P-welldisturb. If cells need less voltage to erase, junction bias a P-welldisturb will reduce. If this is a concern, the higher coupling factor ofthe control gate to the floating gate of the flash cells and the thinnerthickness of the tunnel oxide would reduce the erase voltage level. Thisapplies for both word line driver 10 and word line driver 10A.

The use of two transistors in each word line driver saves large amountsof area verses prior art three or more transistor designs. Inembodiments where two NMOS transistors are used, there are penalties,but these penalties are outweighed by the area savings. For example,during programming, the NMOS gate must be biased at a voltage valueGM0[0] (e.g., 10.5V) that is larger than main word line voltage MWL0[0](e.g., 8V) so that the full main word line voltage level can be passedto the local word lines. The NMOS transistor M3 has a threshold voltage,Vth. The local word line LWL0[0] will be biased at a maximum level ofGM0[0] minus Vth, depending on the voltage level of the main word line.If the main word line voltage is less than this maximum number, the fullvoltage can pass to the local word line. Therefore, GM0[0] should be atleast Vth+MWL0[0] (i.e., the voltage level of the main word line). Thisis not an issue if a PMOS transistor is selected to pass the voltage.The PMOS gate is biased at GM0[0] that is a negative voltage (e.g., −2V)or ground so as to fully pass the main word line voltage. In the dualNMOS embodiment, a separate voltage circuit is used to provide a voltagethat exceeds the main word line voltage, but this signal is a globalsignal and any area consumed by this high voltage circuit is muchsmaller than the area consumed by the use of third transistor or othertransistors in each local word line driver of the prior art. Variousdesigns for circuits for providing this high voltage are known per se tothose in the art and need not be detailed herein. By way of example,like other voltages that are higher than VCC, this voltage can begenerated by pump and regulator circuits. Though not by way oflimitation, examples of charge pump circuits are described in U.S. Pat.No. 5,793,679 to Caser et al. and U.S. Publication No. 2005/0207236 A1to Yamazoe et al.

It should apparent to those in the art that the word line driver designdescribed herein is incorporated into an integrated circuit having theNOR cell memory array and other circuit components, including controllogic, address decoder circuitry such as row and column decoders, andother circuit components or modules familiar to those in the art.

Exemplary applications for the flash memory described hereinincorporating the exemplary word line driver include, but are notlimited to, digital audio players, digital cameras, mobile telephones,USB flash drives (thumb drives), SPI serial flash and gaming memorycards.

Although the invention has been described in terms of exemplaryembodiments, it is not limited thereto. Rather, the appended claimsshould be construed broadly to include other variants and embodiments ofthe invention that may be made by those skilled in the art withoutdeparting from the scope and range of equivalents of the invention.

What is claimed is:
 1. A flash memory device comprising: a plurality offlash memory cells, each flash memory cell comprising a singletransistor, said single transistor being a floating gate transistor; ap-well coupled to the plurality of flash memory cell transistors andconfigured to be biased to a positive well bias voltage for an eraseoperation; a plurality of main word lines, each main word line of theplurality of main word lines coupled to a corresponding group of localword lines, each local word line coupled to gate terminals of thefloating gate transistors of corresponding ones of the plurality offlash memory cells; and driver circuit configured to: in the eraseoperation: pass a first negative word line voltage on a selected mainword line of the plurality of main word lines to at least one selectedlocal word line; and pass a positive word line voltage on unselectedmain word lines of the plurality of main word lines to a plurality ofunselected local word lines; and then, in a soft program operation: passa second negative word line voltage different from the first negativeword line voltage on the unselected main word lines of the plurality ofmain word lines to the plurality of unselected local word lines.
 2. Theflash memory device of claim 1, wherein the driver circuit is furtherconfigured to, in the soft program operation, pass the second negativeword line voltage on the selected main word line of the plurality ofmain word lines to the at least one selected local word line.
 3. Theflash memory device of claim 1, wherein the difference between thepositive well bias voltage and the first negative word line voltage issufficient to erase selected flash memory cells connected to the atleast one selected local word line.
 4. The flash memory device of claim1, wherein the difference between the positive well bias voltage and thepositive word line voltage is insufficient to erase unselected flashmemory cells connected to the plurality of unselected local word lines.5. The flash memory device of claim 1, wherein the positive well biasvoltage is higher than VCC.
 6. The flash memory device of claim 5,wherein the positive well bias voltage is approximately 7.5 volts. 7.The flash memory device of claim 1, wherein the first negative word linevoltage is higher in magnitude than VCC.
 8. The flash memory device ofclaim 7, wherein the first negative word line voltage is approximately−7.5 volts.
 9. The flash memory device of claim 1, wherein the secondnegative word line voltage is lower in magnitude than VCC.
 10. The flashmemory device of claim 9, wherein the second negative word line voltageis approximately −0.5 volts or −1.0 volts.
 11. The flash memory deviceof claim 1, wherein the positive word line voltage is lower in magnitudethan VCC.
 12. The flash memory device of claim 11, wherein the positiveword line voltage is approximately 2.5 volts.
 13. The flash memorydevice of claim 1, wherein the plurality of flash memory celltransistors are NAND type flash memory cell transistors.
 14. The flashmemory device of claim 1, wherein the plurality of flash memory celltransistors are NOR type flash memory cell transistors.
 15. The flashmemory device of claim 1, wherein the plurality of flash memory cellscorresponds to a first block of a plurality of erasable blocks, eachblock associated with a p-well; wherein each of the plurality of mainword lines in the first block corresponds to one of a plurality oferasable sectors of flash memory cells in that block.
 16. The flashmemory device of claim 1, wherein each of the plurality of main wordlines corresponds to one of a plurality of erasable sectors of flashmemory cells in the p-well.
 17. The flash memory device of claim 1,wherein the driver circuit further configured to pass a second positiveword line voltage on the selected main word line of the plurality ofmain word lines to the at least one selected local word line for aprogram operation.
 18. The flash memory device of claim 17, wherein thedriver circuit further configured to pass the second negative word linevoltage on the unselected main word lines of the plurality of main wordlines to the plurality of unselected local word lines for the programoperation.
 19. The flash memory device of claim 17, wherein the secondpositive word line voltage is higher in magnitude than VCC.
 20. Theflash memory device of claim 19, wherein the second positive word linevoltage is approximately 8 volts.